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Showing posts with label CRYSTAL. Show all posts
Showing posts with label CRYSTAL. Show all posts

Graphene Is Strongest Material in the World Even with Defects

Written By Unknown on Tuesday, February 3, 2015 | 9:15 PM

Graphene remains the strongest material ever measured and, as Professor Hone once put it, so strong that "it would take an elephant, balanced on a pencil, to break through a sheet of graphene the thickness of Saran Wrap.” —Illustration by Andrew Shea for Columbia Engineering

In a new study, published in Science May 31, 2013, Columbia Engineering researchers demonstrate that graphene, even if stitched together from many small crystalline grains, is almost as strong as graphene in its perfect crystalline form. This work resolves a contradiction between theoretical simulations, which predicted that grain boundaries can be strong, and earlier experiments, which indicated that they were much weaker than the perfect lattice.

Graphene consists of a single atomic layer of carbon, arranged in a honeycomb lattice. “Our first Science paper, in 2008, studied the strength graphene can achieve if it has no defects—its intrinsic strength,” says James Hone, professor of mechanical engineering, who led the study with Jeffrey Kysar, professor of mechanical engineering. “But defect-free, pristine graphene exists only in very small areas. Large-area sheets required for applications must contain many small grains connected at grain boundaries, and it was unclear how strong those grain boundaries were. This, our second Science paper, reports on the strength of large-area graphene films grown using chemical vapor deposition (CVD), and we’re excited to say that graphene is back and stronger than ever.”

The study verifies that commonly used methods for post-processing CVD-grown graphene weaken grain boundaries, resulting in the extremely low strength seen in previous studies. The Columbia Engineering team developed a new process that prevents any damage of graphene during transfer. “We substituted a different etchant and were able to create test samples without harming the graphene,” notes the paper’s lead author, Gwan-Hyoung Lee, a postdoctoral fellow in the Hone lab. “Our findings clearly correct the mistaken consensus that grain boundaries of graphene are weak. This is great news because graphene offers such a plethora of opportunities both for fundamental scientific research and industrial applications.”
Profs. James Hone and Jeffrey Kysar
                                              Profs. James Hone and Jeffrey Kysar
In its perfect crystalline form, graphene (a one-atom-thick carbon layer) is the strongest material ever measured, as the Columbia Engineering team reported in Science in 2008—so strong that, as Hone observed, “it would take an elephant, balanced on a pencil, to break through a sheet of graphene the thickness of Saran Wrap.” For the first study, the team obtained small, structurally perfect flakes of graphene by mechanical exfoliation, or mechanical peeling, from a crystal of graphite. But exfoliation is a time-consuming process that will never be practical for any of the many potential applications of graphene that require industrial mass production.

Currently, scientists can grow sheets of graphene as large as a television screen by using chemical vapor deposition (CVD), in which single layers of graphene are grown on copper substrates in a high-temperature furnace. One of the first applications of graphene may be as a conducting layer in flexible displays.

“But CVD graphene is ‘stitched’ together from many small crystalline grains—like a quilt—at grain boundaries that contain defects in the atomic structure,” Kysar explains. “These grain boundaries can severely limit the strength of large-area graphene if they break much more easily than the perfect crystal lattice, and so there has been intense interest in understanding how strong they can be.”

The Columbia Engineering team wanted to discover what was making CVD graphene so weak. In studying the processing techniques used to create their samples for testing, they found that the chemical most commonly used to remove the copper substrate also causes damage to the graphene, severely degrading its strength.

WATCH VIDEO
Click on the Video to watch Prof. James Hone take us on a tour of his synthesis lab in the Northwest Corner Building, where he grows graphene and nanotubes.

Their experiments demonstrated that CVD graphene with large grains is exactly as strong as exfoliated graphene, showing that its crystal lattice is just as perfect. And, more surprisingly, their experiments also showed that CVD graphene with small grains, even when tested right at a grain boundary, is about 90% as strong as the ideal crystal.

“This is an exciting result for the future of graphene, because it provides experimental evidence that the exceptional strength it possesses at the atomic scale can persist all the way up to samples inches or more in size,” says Hone. “This strength will be invaluable as scientists continue to develop new flexible electronics and ultrastrong composite materials.”

Strong, large-area graphene can be used for a wide variety of applications such as flexible electronics and strengthening components—potentially, a television screen that rolls up like a poster or ultrastrong composites that could replace carbon fiber. Or, the researchers speculate, a science fiction idea of a space elevator that could connect an orbiting satellite to Earth by a long cord that might consist of sheets of CVD graphene, since graphene (and its cousin material, carbon nanotubes) is the only material with the high strength-to-weight ratio required for this kind of hypothetical application.

The team is also excited about studying 2D materials like graphene. “Very little is known about the effects of grain boundaries in 2D materials,” Kysar adds. “Our work shows that grain boundaries in 2D materials can be much more sensitive to processing than in 3D materials. This is due to all the atoms in graphene being surface atoms, so surface damage that would normally not degrade the strength of 3D materials can completely destroy the strength of 2D materials. However with appropriate processing that avoids surface damage, grain boundaries in 2D materials, especially graphene, can be nearly as strong as the perfect, defect-free structure.”

The study was supported by grants from the Air Force Office of Scientific Research and the National Science Foundation.

—by Holly Evarts

Source: Columbia University

Silicon carbide increases energy efficiency

Written By Unknown on Monday, February 2, 2015 | 6:33 PM

Illustration of the fill port of a silicon single crystal bar which has been prepared by the zone melting process. (Photo: TRUMPF Hüttinger)
To increase the efficiency of the power supply in industrial processes, thereby saving energy and CO2, the aim of the new joint "MMPSiC": Researchers at the Light Technology Institute (LTI) at the Karlsruhe Institute of Technology (KIT) examine together with the industrial partners TRUMPF Hüttinger and IXYS Semiconductor the use of power semiconductor switches of silicon carbide. The Federal Research Ministry is supporting the project with around 800,000 euros.

Of the semiconductor manufacturing over the coating of displays to processes in the automotive industry: Many industrial processes consume large amounts of electrical energy. Among these are technologies that will play an important role in the energy transition, as the zone melting method (float zone method) for producing high purity crystalline materials: The substance is electrically fused in a narrow zone; the melting zone is gradually continued. Behind the melting zone crystallized substance purer than before. The zone melting method provides, among other high-purity silicon single crystals for the manufacture of solar cells.

Power supply of zone melting systems based on tube technology systems are used to now having an electrical efficiency of up to 65 percent. By switching to power semiconductor silicon carbide, the efficiency of the process power supply could be increased to over 80 percent. This would save large amounts of electrical energy and reduce greenhouse gas emissions. For example, for a single float-zone scale plant would result consisting of 20 x 150 kW-process power supplies, with an annual duration of 4800 hours, a savings of more than 200,000 kWh of electrical energy and 109 tonnes of CO2 (Umweltbundesamt, as of July 2013).

The feasibility of such a process power supplies, researchers at the Light Technology Institute (LTI) of KIT together with the partners TRUMPF Hüttinger GmbH + Co. KG (Freiburg) and IXYS Semiconductor GmbH (Lampertheim) in the joint project "Modular medium frequency process power supply with silicon carbide semiconductor power switches" (MMPSiC) , As the semiconductor material Silicon Carbide offers several advantages: Thanks to the larger electronic band gap allows much higher operating temperatures than conventional semiconductors. Power electronics with silicon carbide is characterized by higher energy efficiency and compactness.

"When the power of energy-intensive industrial applications such as the zone melting method, it is necessary to switch at high frequencies," says the project director, Dr. Rainer Kling from LTI of KIT. "Silicon carbide is not yet tested for these high frequencies; so that we are breaking new ground. "In addition to examining the long-term stability include the control and the layout of the circuit to the tasks of the KIT researchers in the joint project MMPSiC.

The Federal Ministry of Education and Research (BMBF) supports MMPSiC project on the basis of the program "Information and Communication Technology 2020" (ICT 2020) as part of the funding program "Power electronics to increase energy efficiency" (LES 2) with around 800,000 euros. Of which receives the LTI KIT around 439,000 euros. Overall, the project volume is 1.3 million euros. The joint project started in 2014 and is planned for three years.

Source: KIT
 
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